byz35a22 ... byz35a47, byz35k22 ... byz35k47 byz35a22 ... byz35a47 , byz35k22 ... byz35k47 silicon-protectifiers ? with tvs characteristic C high temperature diodes silizium-schutzgleichrichter mit begrenzereigenschaft C hochtemperatur-dioden version 2015-04-15 dimensions - ma?e [mm] nominal current nennstrom 35 a nominal breakdown voltage nominale abbruchspannung 22 ... 47 v metal press-fit case with plastic cover metall-einpressgeh?use mit plastik-abdeckung weight approx. gewicht ca. 10 g compound has classification ul94v-0 vergussmasse nach ul94v-0 klassifiziert standard packaging: bulk standard lieferform: lose im karton maximum ratings grenzwerte type / typ wire to / draht an breakdown voltage abbruch spannung i t = 100 ma reverse voltage s perrspannung i r = 5 a max. clamping voltage max. begrenzerspanng. at / bei i pp , t p = 1 ms anode cathode v brmin [v] v brmax [v] v r [v] v c [v] i pp [a] byz35a22 byz35k22 19.8 24.2 > 17.8 31.9 157 byz35a27 byz35k27 24.3 29.7 > 21.8 39.1 128 byz35a33 byz35k33 29.7 36.3 > 26.8 47.7 105 byz35a39 byz35k39 35.1 42.9 > 31.6 56.4 89 byz35a47 byz35k47 42.3 51.7 > 38.1 67.8 74 max. average forward rectified current, r-load dauergrenzstrom in einwegschaltung mit r-last t c = 150c i fav 35 a repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 72 a 1 ) peak forward surge current, 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 360/400 a rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 660 a 2 s junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+200c -50...+200c peak junction temperature in case of load-dump spitzensperrschichttemperatur bei load-dump t p < 400 ms t jm +215c 1 max. case temperature t c = 150c C max. geh?usetemperatur t c = 150c ? diotec semiconductor ag http://www.diotec.com/ 1 2 8 . 5 m i n ? 12.75 r ? n d e l 0 . 8 k n u r l 0 . 8 ? 0.5 11 1.3 9 . 3 0 . 2 4 . 2 + 0 . 3
byz35a22 ... byz35a47, byz35k22 ... byz35k47 characteristics kennwerte forward voltage durchlass-spannung t j = 25c i f = 35 a v f < 1.1 v thermal resistance junction C case w?rme widerstand sperrschicht C geh?use r thc < 0.8 k/w maximum pressing force maximaler einpressdruck f pmax 4 kn ? diotec semiconductor ag http://www.diotec.com/ 2 120 100 80 60 40 20 0 [%] i fav rated forward current versus case temperature zul. richtstrom in abh. von der geh?usetemp. [c] t c 150 100 50 0 200 forward characteristics (typical values) durchlasskennlinien (typische werte) 0.4 v f 0.8 1.0 1.2 1.4 [v] 1.8 10 10 10 1 10 3 2 -1 [a] i f t = 25c j t = 125c j 360a-(35a-1,1v) peak forward surge current versus number of cycles at 50 hz durchla?-spitzenstrom in abh. von der zahl der halbwellen bei 50 hz 10 10 10 3 2 [a] ? f 1 10 10 [n] 10 2 3
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